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BL3N100-P Spec and Replacement


   Type Designator: BL3N100-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO-220

 BL3N100-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL3N100-P Specs

 ..1. Size:660K  belling
 bl3n100-p bl3n100-a bl3n100-u bl3n100-d.pdf pdf_icon

BL3N100-P

BL3N100 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio... See More ⇒

 7.1. Size:1014K  belling
 bl3n100e-p bl3n100e-a bl3n100e-u bl3n100e-d.pdf pdf_icon

BL3N100-P

BL3N100E Power MOSFET 1 Description Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS P... See More ⇒

 8.1. Size:659K  belling
 bl3n105-p bl3n105-a bl3n105-u bl3n105-d.pdf pdf_icon

BL3N100-P

BL3N105 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL3N105, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio... See More ⇒

 9.1. Size:1306K  belling
 bl3n150-p bl3n150-a bl3n150-w bl3n150-k bl3n150-f bl3n150-b.pdf pdf_icon

BL3N100-P

BL3N150 Power MOSFET 1 Description Step-Down Converter BL3N150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

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Detailed specifications: BL33N25-A , BL33N25-P , BL3N100-A , BL3N100-D , BL3N100E-A , BL3N100E-D , BL3N100E-P , BL3N100E-U , IRF9540N , BL3N100-U , BL3N105-A , BL3N105-D , BL3N105-P , BL3N105-U , BL3N150-A , BL3N150-B , BL3N150-F .

History: P8008HV | DE375-102N12A

Keywords - BL3N100-P MOSFET specs

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