Справочник MOSFET. BL3N100-P

 

BL3N100-P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BL3N100-P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 138 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 65 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.2 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для BL3N100-P

 

 

BL3N100-P Datasheet (PDF)

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 bl3n100-p bl3n100-a bl3n100-u bl3n100-d.pdf

BL3N100-P BL3N100-P

BL3N100 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio

 7.1. Size:1014K  belling
 bl3n100e-p bl3n100e-a bl3n100e-u bl3n100e-d.pdf

BL3N100-P BL3N100-P

BL3N100E Power MOSFET 1Description Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS P

 8.1. Size:659K  belling
 bl3n105-p bl3n105-a bl3n105-u bl3n105-d.pdf

BL3N100-P BL3N100-P

BL3N105 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL3N105, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio

 9.1. Size:1306K  belling
 bl3n150-p bl3n150-a bl3n150-w bl3n150-k bl3n150-f bl3n150-b.pdf

BL3N100-P BL3N100-P

BL3N150 Power MOSFET 1Description Step-Down Converter BL3N150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

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