BL3N90-A Specs and Replacement
Type Designator: BL3N90-A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 47 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: TO-220F
BL3N90-A substitution
BL3N90-A datasheet
bl3n90-p bl3n90-a bl3n90-u bl3n90-d.pdf
BL3N90 Power MOSFET 1 Description Step-Down Converter BL3N90, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Param... See More ⇒
bl3n90e-p bl3n90e-a bl3n90e-u bl3n90e-d.pdf
BL3N90E Power MOSFET 1 Description Step-Down Converter BL3N90E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par... See More ⇒
Detailed specifications: BL3N105-P , BL3N105-U , BL3N150-A , BL3N150-B , BL3N150-F , BL3N150-K , BL3N150-P , BL3N150-W , 12N60 , BL3N90-D , BL3N90E-A , BL3N90E-D , BL3N90E-P , BL3N90E-U , BL3N90-P , BL3N90-U , BL40N25-F .
History: IPB067N08N3 | AGM16N10C | IRFY120 | TK8P60W5
Keywords - BL3N90-A MOSFET specs
BL3N90-A cross reference
BL3N90-A equivalent finder
BL3N90-A pdf lookup
BL3N90-A substitution
BL3N90-A replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPB067N08N3 | AGM16N10C | IRFY120 | TK8P60W5
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