All MOSFET. BL3N90-D Datasheet

 

BL3N90-D MOSFET. Datasheet pdf. Equivalent


   Type Designator: BL3N90-D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.8 nC
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO-252

 BL3N90-D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL3N90-D Datasheet (PDF)

 ..1. Size:973K  belling
 bl3n90-p bl3n90-a bl3n90-u bl3n90-d.pdf

BL3N90-D BL3N90-D

BL3N90 Power MOSFET 1Description Step-Down Converter BL3N90, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Param

 8.1. Size:965K  belling
 bl3n90e-p bl3n90e-a bl3n90e-u bl3n90e-d.pdf

BL3N90-D BL3N90-D

BL3N90E Power MOSFET 1Description Step-Down Converter BL3N90E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top