BL3N90-D Datasheet. Specs and Replacement

Type Designator: BL3N90-D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO-252

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BL3N90-D datasheet

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BL3N90-D

BL3N90 Power MOSFET 1 Description Step-Down Converter BL3N90, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Param... See More ⇒

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BL3N90-D

BL3N90E Power MOSFET 1 Description Step-Down Converter BL3N90E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par... See More ⇒

Detailed specifications: BL3N105-U, BL3N150-A, BL3N150-B, BL3N150-F, BL3N150-K, BL3N150-P, BL3N150-W, BL3N90-A, 5N65, BL3N90E-A, BL3N90E-D, BL3N90E-P, BL3N90E-U, BL3N90-P, BL3N90-U, BL40N25-F, BL40N25-W

Keywords - BL3N90-D MOSFET specs

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