All MOSFET. BL4N80K-U Datasheet

 

BL4N80K-U MOSFET. Datasheet pdf. Equivalent


   Type Designator: BL4N80K-U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 13.8 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO-251

 BL4N80K-U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL4N80K-U Datasheet (PDF)

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BL4N80K Power MOSFET 1Description Step-Down Converter BL4N80K, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

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BL4N80A Power MOSFET 1Description Step-Down Converter BL4N80A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

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BL4N80 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL4N80, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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