All MOSFET. BL50N30-W Datasheet

 

BL50N30-W Datasheet and Replacement


   Type Designator: BL50N30-W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 860 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
   Package: TO-3PN
 

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BL50N30-W Datasheet (PDF)

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BL50N30-W

BL50N30 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL50N30, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

Datasheet: BL4N80-D , BL4N80K-A , BL4N80K-D , BL4N80K-P , BL4N80K-U , BL4N80-P , BL4N80-U , BL50N30-F , IRFB7545 , BL59N30-F , BL59N30-W , BL5N135-A , BL5N135-F , BL5N135-K , BL5N135-P , BL5N135-W , BL5N50-A .

History: NTLUD3A260PZ | UMBF170 | BL50N30-F | DH029N08D | NCE01H21T | UT100N03-Q | NCE0202M

Keywords - BL50N30-W MOSFET datasheet

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