BL50N30-W Specs and Replacement

Type Designator: BL50N30-W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 860 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm

Package: TO-3PN

BL50N30-W substitution

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BL50N30-W datasheet

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 bl50n30-w bl50n30-f.pdf pdf_icon

BL50N30-W

BL50N30 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL50N30, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒

Detailed specifications: BL4N80-D, BL4N80K-A, BL4N80K-D, BL4N80K-P, BL4N80K-U, BL4N80-P, BL4N80-U, BL50N30-F, IRFB7545, BL59N30-F, BL59N30-W, BL5N135-A, BL5N135-F, BL5N135-K, BL5N135-P, BL5N135-W, BL5N50-A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.