All MOSFET. BL59N30-F Datasheet

 

BL59N30-F Datasheet and Replacement


   Type Designator: BL59N30-F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 420 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 59 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 550 nS
   Cossⓘ - Output Capacitance: 895 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-247
 

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BL59N30-F Datasheet (PDF)

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BL59N30-F

BL59N30 Power MOSFET 1Description Step-Down Converter BL59N30, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFH50N50P3 | PHX2N50E

Keywords - BL59N30-F MOSFET datasheet

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