All MOSFET. BL59N30-F Datasheet

 

BL59N30-F MOSFET. Datasheet pdf. Equivalent


   Type Designator: BL59N30-F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 420 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 59 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 155 nC
   trⓘ - Rise Time: 550 nS
   Cossⓘ - Output Capacitance: 895 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-247

 BL59N30-F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL59N30-F Datasheet (PDF)

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 bl59n30-w bl59n30-f.pdf

BL59N30-F BL59N30-F

BL59N30 Power MOSFET 1Description Step-Down Converter BL59N30, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

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