FQL40N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQL40N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 460 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 155 nC
Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
Package: TO264
FQL40N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQL40N50 Datasheet (PDF)
1.1. fql40n50f.pdf 
Size:673K _fairchild_semi
September 2001 TM FRFET FQL40N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC) planar stripe, DMOS technology. Low Crss ( typical 95 pF) This advanced technology has been especially tailored to
1.2. fql40n50.pdf Size:623K _fairchild_semi
May 2001 TM QFET FQL40N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC) planar stripe, DMOS technology. Low Crss ( typical 95 pF) This advanced technology has been especially tailored to Fast swi
1.3. fql40n50.pdf Size:200K _inchange_semiconductor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQL40N50 ·FEATURES ·High breakdown voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High speed power switching ·Power factor correction,motor drive and welding machine ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARA
Datasheet: FQI5N60C , IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , IRFP450 , FQL40N50F , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C .
