BL8N100-P Specs and Replacement

Type Designator: BL8N100-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-220

BL8N100-P substitution

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BL8N100-P datasheet

 ..1. Size:1469K  belling
 bl8n100-p bl8n100-a bl8n100-w bl8n100-f.pdf pdf_icon

BL8N100-P

BL8N100 Power MOSFET 1 Description Step-Down Converter BL8N100, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

Detailed specifications: BL7N80-P, BL7N80-W, BL80N20-F, BL80N20L-F, BL80N20L-W, BL80N20-W, BL8N100-A, BL8N100-F, 5N65, BL8N100-W, BL8N50-A, BL8N50-D, BL8N50-I, BL8N50-P, BL8N50-U, BL8N60-A, BL8N60-D

Keywords - BL8N100-P MOSFET specs

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