All MOSFET. FQNL2N50B Datasheet

 

FQNL2N50B Datasheet and Replacement


   Type Designator: FQNL2N50B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id| ⓘ - Maximum Drain Current: 0.35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.3 Ohm
   Package: TO92L
 

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FQNL2N50B Datasheet (PDF)

 ..1. Size:598K  fairchild semi
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FQNL2N50B

March 2001TMQFETFQNL2N50B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.35A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technology has been especially tailo

 ..2. Size:966K  onsemi
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FQNL2N50B

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:596K  fairchild semi
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FQNL2N50B

March 2001TMQFETFQNL2N50B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.35A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technology has been especially tailo

Datasheet: FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , FQL40N50F , FQN1N50C , FQN1N60C , FDP3652 , 2SK3878 , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 , FQP12P20 , FQP13N06L , FQP13N10 , FDD3682 .

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