Справочник MOSFET. FQNL2N50B

 

FQNL2N50B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQNL2N50B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5.3 Ohm
   Тип корпуса: TO92L

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FQNL2N50B Datasheet (PDF)

 ..1. Size:598K  fairchild semi
 fqnl2n50b.pdf

FQNL2N50B FQNL2N50B

March 2001TMQFETFQNL2N50B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.35A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technology has been especially tailo

 ..2. Size:966K  onsemi
 fqnl2n50b.pdf

FQNL2N50B FQNL2N50B

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:596K  fairchild semi
 fqnl2n50bbu fqnl2n50bta.pdf

FQNL2N50B FQNL2N50B

March 2001TMQFETFQNL2N50B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.35A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technology has been especially tailo

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