All MOSFET. BL9N20-P Datasheet

 

BL9N20-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BL9N20-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-220

 BL9N20-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL9N20-P Datasheet (PDF)

 ..1. Size:603K  belling
 bl9n20-p bl9n20-a bl9n20-u bl9n20-d.pdf

BL9N20-P BL9N20-P

BL9N20 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL9N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top