BLC75N120-F MOSFET. Datasheet pdf. Equivalent
Type Designator: BLC75N120-F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 187.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 63.5 nC
trⓘ - Rise Time: 17.6 nS
Cossⓘ - Output Capacitance: 70.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-247
BLC75N120-F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLC75N120-F Datasheet (PDF)
blc75n120-f blc75n120-z blc75n120-bg.pdf
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BLC75N120 Silicon Carbide Power MOSFET 1Description Step-Down Converter BLC75N120 is an N-channel enhancement type planar , MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on-resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation f
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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