All MOSFET. BLC75N120-F Datasheet

 

BLC75N120-F MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLC75N120-F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 63.5 nC
   trⓘ - Rise Time: 17.6 nS
   Cossⓘ - Output Capacitance: 70.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-247

 BLC75N120-F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLC75N120-F Datasheet (PDF)

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 blc75n120-f blc75n120-z blc75n120-bg.pdf

BLC75N120-F BLC75N120-F

BLC75N120 Silicon Carbide Power MOSFET 1Description Step-Down Converter BLC75N120 is an N-channel enhancement type planar , MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on-resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation f

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