All MOSFET. BLM03N03-D Datasheet

 

BLM03N03-D Datasheet and Replacement


   Type Designator: BLM03N03-D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-252
 

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BLM03N03-D Datasheet (PDF)

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BLM03N03-D

BLM03N03 Power MOSFET 1Description Step-Down Converter The BLM03N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DSI 150 A DR .Typ 2.3 m DS(ON)@10V R .Typ 3.8 m DS(ON)@4.5V FEATURES Advanced Trench Technology

Datasheet: BL9N50-P , BL9N50-U , BL9N90-A , BL9N90-F , BL9N90-W , BLC75N120-BG , BLC75N120-F , BLC75N120-Z , AON6380 , BLM04N06-B , BLM04N06-P , BLM04N08-B , BLM04N08-P , BLM055N04-D , BLM05N03-D , BLM06N03-D , BLM06N10-B .

History: PSMN006-20K | UT2304

Keywords - BLM03N03-D MOSFET datasheet

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