BLM03N03-D Specs and Replacement

Type Designator: BLM03N03-D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO-252

BLM03N03-D substitution

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BLM03N03-D datasheet

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 blm03n03-d.pdf pdf_icon

BLM03N03-D

BLM03N03 Power MOSFET 1 Description Step-Down Converter The BLM03N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DS I 150 A D R .Typ 2.3 m DS(ON)@10V R .Typ 3.8 m DS(ON)@4.5V FEATURES Advanced Trench Technology... See More ⇒

Detailed specifications: BL9N50-P, BL9N50-U, BL9N90-A, BL9N90-F, BL9N90-W, BLC75N120-BG, BLC75N120-F, BLC75N120-Z, IRFZ24N, BLM04N06-B, BLM04N06-P, BLM04N08-B, BLM04N08-P, BLM055N04-D, BLM05N03-D, BLM06N03-D, BLM06N10-B

Keywords - BLM03N03-D MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs