All MOSFET. BLM03N03-D Datasheet

 

BLM03N03-D MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM03N03-D
   Marking Code: M03N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 89.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 77.4 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-252

 BLM03N03-D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM03N03-D Datasheet (PDF)

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 blm03n03-d.pdf

BLM03N03-D BLM03N03-D

BLM03N03 Power MOSFET 1Description Step-Down Converter The BLM03N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DSI 150 A DR .Typ 2.3 m DS(ON)@10V R .Typ 3.8 m DS(ON)@4.5V FEATURES Advanced Trench Technology

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