All MOSFET. BLM04N08-P Datasheet

 

BLM04N08-P Datasheet and Replacement


   Type Designator: BLM04N08-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220
 

 BLM04N08-P substitution

   - MOSFET ⓘ Cross-Reference Search

 

BLM04N08-P Datasheet (PDF)

 ..1. Size:829K  belling
 blm04n08-p blm04n08-b.pdf pdf_icon

BLM04N08-P

Green Product BLM04N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N08 uses advanced trench technology to provide V = 80V,I = 200A DS Dexcellent R , low gate charge. It can be used in a wide DS(ON)R

 7.1. Size:1138K  belling
 blm04n06-p blm04n06-b.pdf pdf_icon

BLM04N08-P

Green Product BLM04N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N06 uses advanced trench technology to provide V = 60V,I = 150A DS Dexcellent R , low gate charge. It can be used in a wide DS(ON)R

Datasheet: BL9N90-W , BLC75N120-BG , BLC75N120-F , BLC75N120-Z , BLM03N03-D , BLM04N06-B , BLM04N06-P , BLM04N08-B , 75N75 , BLM055N04-D , BLM05N03-D , BLM06N03-D , BLM06N10-B , BLM06N10-P , BLM075N04-D , BLM07N06-D , BLM07N06-P .

History: 11NM70G-TF3-T | FQPF50N06 | BLP03N10-T | AOK065A60FD | BLP03N10-BA | 9N25AF | BLP05N08G-B

Keywords - BLM04N08-P MOSFET datasheet

 BLM04N08-P cross reference
 BLM04N08-P equivalent finder
 BLM04N08-P lookup
 BLM04N08-P substitution
 BLM04N08-P replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.