All MOSFET. BLM04N08-P Datasheet

 

BLM04N08-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM04N08-P
   Marking Code: M04N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 257 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220

 BLM04N08-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM04N08-P Datasheet (PDF)

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 blm04n08-p blm04n08-b.pdf

BLM04N08-P BLM04N08-P

Green Product BLM04N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N08 uses advanced trench technology to provide V = 80V,I = 200A DS Dexcellent R , low gate charge. It can be used in a wide DS(ON)R

 7.1. Size:1138K  belling
 blm04n06-p blm04n06-b.pdf

BLM04N08-P BLM04N08-P

Green Product BLM04N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N06 uses advanced trench technology to provide V = 60V,I = 150A DS Dexcellent R , low gate charge. It can be used in a wide DS(ON)R

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BSP100

 

 
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