BLM055N04-D Datasheet and Replacement
Type Designator: BLM055N04-D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 64.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO-252
BLM055N04-D substitution
BLM055N04-D Datasheet (PDF)
blm055n04-d.pdf
BLM055N04 Power MOSFET 1Description Step-Down Converter The BLM055N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DSI 80 A DR .Typ 3.4 m DS(ON)@10V R .Typ 4.5 m DS(ON)@4.5V FEATURES Advanced Trench Technolog
blm05n03-d.pdf
BLM05N03 Power MOSFET 1Description Step-Down Converter The BLM05N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DSI 100 A DR .Typ 2.7 m DS(ON)@10V R .Typ 5.2 m DS(ON)@4.5V FEATURES Advanced Trench Technology
Datasheet: BLC75N120-BG , BLC75N120-F , BLC75N120-Z , BLM03N03-D , BLM04N06-B , BLM04N06-P , BLM04N08-B , BLM04N08-P , AO3400A , BLM05N03-D , BLM06N03-D , BLM06N10-B , BLM06N10-P , BLM075N04-D , BLM07N06-D , BLM07N06-P , BLM07N20-C .
History: BLP039N08-B | AONS660A70F | CS7N60CF | BLP042N10G-B | BLP05N15-B | APT4016BN | MSU4N60S
Keywords - BLM055N04-D MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BLP039N08-B | AONS660A70F | CS7N60CF | BLP042N10G-B | BLP05N15-B | APT4016BN | MSU4N60S
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