All MOSFET. BLM055N04-D Datasheet

 

BLM055N04-D Datasheet and Replacement


   Type Designator: BLM055N04-D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 64.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-252
 

 BLM055N04-D substitution

   - MOSFET ⓘ Cross-Reference Search

 

BLM055N04-D Datasheet (PDF)

 ..1. Size:568K  belling
 blm055n04-d.pdf pdf_icon

BLM055N04-D

BLM055N04 Power MOSFET 1Description Step-Down Converter The BLM055N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DSI 80 A DR .Typ 3.4 m DS(ON)@10V R .Typ 4.5 m DS(ON)@4.5V FEATURES Advanced Trench Technolog

 9.1. Size:501K  belling
 blm05n03-d.pdf pdf_icon

BLM055N04-D

BLM05N03 Power MOSFET 1Description Step-Down Converter The BLM05N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DSI 100 A DR .Typ 2.7 m DS(ON)@10V R .Typ 5.2 m DS(ON)@4.5V FEATURES Advanced Trench Technology

Datasheet: BLC75N120-BG , BLC75N120-F , BLC75N120-Z , BLM03N03-D , BLM04N06-B , BLM04N06-P , BLM04N08-B , BLM04N08-P , RU6888R , BLM05N03-D , BLM06N03-D , BLM06N10-B , BLM06N10-P , BLM075N04-D , BLM07N06-D , BLM07N06-P , BLM07N20-C .

History: TSM6988DCX6 | 19N10G-TMS4-T | RQ3G100GN | 2SK2146 | 2SK410 | MTP4411M3 | BSB028N06NN3G

Keywords - BLM055N04-D MOSFET datasheet

 BLM055N04-D cross reference
 BLM055N04-D equivalent finder
 BLM055N04-D lookup
 BLM055N04-D substitution
 BLM055N04-D replacement

 

 
Back to Top

 


 
.