BLM055N04-D Specs and Replacement

Type Designator: BLM055N04-D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 64.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO-252

BLM055N04-D substitution

- MOSFET ⓘ Cross-Reference Search

 

BLM055N04-D datasheet

 ..1. Size:568K  belling
 blm055n04-d.pdf pdf_icon

BLM055N04-D

BLM055N04 Power MOSFET 1 Description Step-Down Converter The BLM055N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DS I 80 A D R .Typ 3.4 m DS(ON)@10V R .Typ 4.5 m DS(ON)@4.5V FEATURES Advanced Trench Technolog... See More ⇒

 9.1. Size:501K  belling
 blm05n03-d.pdf pdf_icon

BLM055N04-D

BLM05N03 Power MOSFET 1 Description Step-Down Converter The BLM05N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DS I 100 A D R .Typ 2.7 m DS(ON)@10V R .Typ 5.2 m DS(ON)@4.5V FEATURES Advanced Trench Technology... See More ⇒

Detailed specifications: BLC75N120-BG, BLC75N120-F, BLC75N120-Z, BLM03N03-D, BLM04N06-B, BLM04N06-P, BLM04N08-B, BLM04N08-P, AO3400A, BLM05N03-D, BLM06N03-D, BLM06N10-B, BLM06N10-P, BLM075N04-D, BLM07N06-D, BLM07N06-P, BLM07N20-C

Keywords - BLM055N04-D MOSFET specs

 BLM055N04-D cross reference

 BLM055N04-D equivalent finder

 BLM055N04-D pdf lookup

 BLM055N04-D substitution

 BLM055N04-D replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility