All MOSFET. BLM055N04-D Datasheet

 

BLM055N04-D MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM055N04-D
   Marking Code: M055N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 64.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80.4 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-252

 BLM055N04-D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM055N04-D Datasheet (PDF)

 ..1. Size:568K  belling
 blm055n04-d.pdf

BLM055N04-D BLM055N04-D

BLM055N04 Power MOSFET 1Description Step-Down Converter The BLM055N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DSI 80 A DR .Typ 3.4 m DS(ON)@10V R .Typ 4.5 m DS(ON)@4.5V FEATURES Advanced Trench Technolog

 9.1. Size:501K  belling
 blm05n03-d.pdf

BLM055N04-D BLM055N04-D

BLM05N03 Power MOSFET 1Description Step-Down Converter The BLM05N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DSI 100 A DR .Typ 2.7 m DS(ON)@10V R .Typ 5.2 m DS(ON)@4.5V FEATURES Advanced Trench Technology

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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