All MOSFET. BLM06N10-B Datasheet

 

BLM06N10-B MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM06N10-B
   Marking Code: M06N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 211 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 108 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-263

 BLM06N10-B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM06N10-B Datasheet (PDF)

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 blm06n10-p blm06n10-b.pdf

BLM06N10-B BLM06N10-B

Green Product BLM06N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM06N10 uses advanced trench technology to provide V = 100V,I = 140A DS Dexcellent R , low gate charge. It can be used in a wide R

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 blm06n03-d.pdf

BLM06N10-B BLM06N10-B

BLM06N03 Power MOSFET 1Description Step-Down Converter The BLM06N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DSI 70 A DR .Typ 6.0 m DS(ON)@10V R .Typ 9.5 m DS(ON)@4.5V FEATURES Advanced Trench Technology

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BUK9Y22-100E

 

 
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