All MOSFET. BLM06N10-B Datasheet

 

BLM06N10-B Datasheet and Replacement


   Type Designator: BLM06N10-B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 211 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-263
      - MOSFET Cross-Reference Search

 

BLM06N10-B Datasheet (PDF)

 ..1. Size:850K  belling
 blm06n10-p blm06n10-b.pdf pdf_icon

BLM06N10-B

Green Product BLM06N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM06N10 uses advanced trench technology to provide V = 100V,I = 140A DS Dexcellent R , low gate charge. It can be used in a wide R

 8.1. Size:495K  belling
 blm06n03-d.pdf pdf_icon

BLM06N10-B

BLM06N03 Power MOSFET 1Description Step-Down Converter The BLM06N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DSI 70 A DR .Typ 6.0 m DS(ON)@10V R .Typ 9.5 m DS(ON)@4.5V FEATURES Advanced Trench Technology

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

Keywords - BLM06N10-B MOSFET datasheet

 BLM06N10-B cross reference
 BLM06N10-B equivalent finder
 BLM06N10-B lookup
 BLM06N10-B substitution
 BLM06N10-B replacement

 

 
Back to Top

 


 
.