All MOSFET. BLM10P03-D Datasheet

 

BLM10P03-D MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM10P03-D
   Marking Code: M10P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-252

 BLM10P03-D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM10P03-D Datasheet (PDF)

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 blm10p03-d blm10p03-e blm10p03-q blm10p03-r.pdf

BLM10P03-D BLM10P03-D

BLM10P03Power MOSFET1. DescriptionAdvantagesBLM10P03 uses advanced trench technologyand design to provide excellent R with lowDS(ON)gate charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV -30 VDSI -52 AD(TO-252)R 7 mDS(ON)@10V.TypR 10 mDS(ON)@4.5V.TypPin1FeaturesTO-252 Top View SOP-8 Top V

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MS23P25 | 2SK1776 | IRF7815PBF | KI2305DS

 

 
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