BLM10P03-Q Specs and Replacement

Type Designator: BLM10P03-Q

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: PDFN5X6

BLM10P03-Q substitution

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BLM10P03-Q datasheet

 ..1. Size:1517K  belling
 blm10p03-d blm10p03-e blm10p03-q blm10p03-r.pdf pdf_icon

BLM10P03-Q

BLM10P03 Power MOSFET 1. Description Advantages BLM10P03 uses advanced trench technology and design to provide excellent R with low DS(ON) gate charge. It can be used in a wide variety of applications. Key Characteristics Parameter Value Unit V -30 V DS I -52 A D(TO-252) R 7 m DS(ON)@10V .Typ R 10 m DS(ON)@4.5V .Typ Pin1 Features TO-252 Top View SOP-8 Top V... See More ⇒

Detailed specifications: BLM08N06-P, BLM08N10-B, BLM08N10-P, BLM08N68-P, BLM08P02-E, BLM08P02-R, BLM10P03-D, BLM10P03-E, IRFP064N, BLM10P03-R, BLM12N08-B, BLM12N08-D, BLM12N08-P, BLM12P03-R, BLM14N08-D, BLM14N08-P, BLM16N10-D

Keywords - BLM10P03-Q MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs