All MOSFET. FDP3632 Datasheet

 

FDP3632 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDP3632

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 110 nC

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO220

FDP3632 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP3632 Datasheet (PDF)

1.1. fdp3632.pdf Size:783K _fairchild_semi

FDP3632
FDP3632

October 2013 FDH3632 / FDP3632 / FDB3632 N-Channel PowerTrench® MOSFET 100 V, 80 A, 9 mΩ Applications Features • RDS(ON) = 7.5 mΩ (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification • Qg(tot) = 84 nC (Typ.), VGS = 10 V • Battery Protection Circuit • Low Miller Charge • Motor Drives and Uninterruptible Power Supplies • Low Qrr Body Diode • Micro Solar Inver

1.2. fdb3632 fdp3632 fdi3632 fdh3632.pdf Size:656K _fairchild_semi

FDP3632
FDP3632

December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9m? Features Applications rDS(ON) = 7.5m? (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous R

 5.1. fdb3652 fdp3652 fdi3652.pdf Size:263K _fairchild_semi

FDP3632
FDP3632

October 2003 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16m? Features Applications rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier UI

5.2. fdp3652.pdf Size:590K _fairchild_semi

FDP3632
FDP3632

October 2013 FDP3652 / FDB3652 N-Channel PowerTrench® MOSFET 100 V, 61 A, 16 mΩ Applications Features • rDS(on) = 14 mΩ ( Typ.), VGS = 10 V, ID = 61 A • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Qg(tot) = 41 nC ( Typ.), VGS = 10 V • Low Miller Charge • Motor drives and Uninterruptible Power Supplies • Low QRR Body Diode

 5.3. fdp3651u.pdf Size:644K _fairchild_semi

FDP3632
FDP3632

July 2006 FDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15m? Features Applications rDS(on)=13 m?(Typ.), VGS = 10V, ID = 40A DC/DC converters and Off-Line UPS Qg(TOT)=49 nc(Typ.), VGS = 10 V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectifier UIS Capability (Sing

5.4. fdb3682 fdp3682.pdf Size:278K _fairchild_semi

FDP3632
FDP3632

September 2002 FDB3682 / FDP3682 N-Channel PowerTrench MOSFET 100V, 32A, 36m? Features Applications rDS(ON) = 32m? (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier UIS C

 5.5. fdp3672.pdf Size:237K _fairchild_semi

FDP3632
FDP3632

September 2003 FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33m? Features Applications rDS(ON) = 25m? (Typ.), VGS = 10V, ID = 41A DC/DC converters and Off-Line UPS Qg(tot) = 28nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier Optimized efficie

Datasheet: FQL40N50F , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , IRFP064N , FQP12P20 , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , FQP14N30 .

 

 
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