All MOSFET. FDP3632 Datasheet


FDP3632 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDP3632

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 110 nC

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO220

FDP3632 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FDP3632 Datasheet (PDF)

0.1. fdp3632.pdf Size:783K _fairchild_semi


October 2013FDH3632 / FDP3632 / FDB3632N-Channel PowerTrench MOSFET 100 V, 80 A, 9 mApplicationsFeatures RDS(ON) = 7.5 m (Typ.), VGS = 10 V, ID = 80 A Synchronous Rectification Qg(tot) = 84 nC (Typ.), VGS = 10 V Battery Protection Circuit Low Miller Charge Motor Drives and Uninterruptible Power Supplies Low Qrr Body Diode Micro Solar Inver

0.2. fdb3632 fdp3632 fdi3632 fdh3632.pdf Size:656K _fairchild_semi


December 2008FDB3632 / FDP3632 / FDI3632 / FDH3632N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi

 0.3. fdp3632.pdf Size:283K _inchange_semiconductor


isc N-Channel MOSFET Transistor FDP3632FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 9m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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