FDP3632 - описание и поиск аналогов

December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi

October 2013 FDH3632 / FDP3632 / FDB3632 N-Channel PowerTrench MOSFET 100 V, 80 A, 9 m Applications Features RDS(ON) = 7.5 m (Typ.), VGS = 10 V, ID = 80 A Synchronous Rectification Qg(tot) = 84 nC (Typ.), VGS = 10 V Battery Protection Circuit Low Miller Charge Motor Drives and Uninterruptible Power Supplies Low Qrr Body Diode Micro Solar Inver

MOSFET Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 www.onsemi.com Features RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 84 nC (Typ.), VGS = 10 V VDSS RDS(ON) MAX ID MAX Low Miller Charge 100 V 9 mW 80 A Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) D These Devices are Pb-Free and are R

isc N-Channel MOSFET Transistor FDP3632 FEATURES With TO-220 packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 9m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

September 2002 FDB3682 / FDP3682 N-Channel PowerTrench MOSFET 100V, 32A, 36m Features Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchr

October 2013 FDP3652 / FDB3652 N-Channel PowerTrench MOSFET 100 V, 61 A, 16 m Applications Features rDS(on) = 14 m ( Typ.), VGS = 10 V, ID = 61 A Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Qg(tot) = 41 nC ( Typ.), VGS = 10 V Low Miller Charge Motor drives and Uninterruptible Power Supplies Low QRR Body Diode

July 2006 FDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15m Features Applications rDS(on)=13 m (Typ.), VGS = 10V, ID = 40A DC/DC converters and Off-Line UPS Qg(TOT)=49 nc(Typ.), VGS = 10 V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectifier

October 2003 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

September 2003 FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33m Features Applications rDS(ON) = 25m (Typ.), VGS = 10V, ID = 41A DC/DC converters and Off-Line UPS Qg(tot) = 28nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectif

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDP3651U FEATURES With TO-220 packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 18m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

isc N-Channel MOSFET Transistor FDP3682 FEATURES With TO-220 packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 36m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc N-Channel MOSFET Transistor FDP3672 FEATURES With TO-220 packaging Drain Source Voltage- V 105V DSS Static drain-source on-resistance RDS(on) 33m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )