All MOSFET. BLM12N08-D Datasheet

 

BLM12N08-D MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM12N08-D
   Marking Code: M12N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 420 nC
   trⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO-252

 BLM12N08-D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM12N08-D Datasheet (PDF)

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 blm12n08-p blm12n08-d blm12n08-b.pdf

BLM12N08-D BLM12N08-D

Green Product BLM12N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM12N08 uses advanced trench technology to provide V = 80V,I = 70A DS Dexcellent R , low gate charge. It can be used in a wide R

 9.1. Size:1164K  belling
 blm12p03-r.pdf

BLM12N08-D BLM12N08-D

Pb Free Product BLM12P03 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM12P03 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -20A DS DR

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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