BLM12N08-P Specs and Replacement

Type Designator: BLM12N08-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO-220

BLM12N08-P substitution

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BLM12N08-P datasheet

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 blm12n08-p blm12n08-d blm12n08-b.pdf pdf_icon

BLM12N08-P

Green Product BLM12N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM12N08 uses advanced trench technology to provide V = 80V,I = 70A DS D excellent R , low gate charge. It can be used in a wide R ... See More ⇒

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 blm12p03-r.pdf pdf_icon

BLM12N08-P

Pb Free Product BLM12P03 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION G The BLM12P03 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) S voltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -20A DS D R ... See More ⇒

Detailed specifications: BLM08P02-E, BLM08P02-R, BLM10P03-D, BLM10P03-E, BLM10P03-Q, BLM10P03-R, BLM12N08-B, BLM12N08-D, IRF3205, BLM12P03-R, BLM14N08-D, BLM14N08-P, BLM16N10-D, BLM16N10-P, BLM22N10-D, BLM22N10-P, BLM30DN06L-E

Keywords - BLM12N08-P MOSFET specs

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