BLM12P03-R Specs and Replacement

Type Designator: BLM12P03-R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 294 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: PDFN3.3X3.3

BLM12P03-R substitution

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BLM12P03-R datasheet

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 blm12p03-r.pdf pdf_icon

BLM12P03-R

Pb Free Product BLM12P03 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION G The BLM12P03 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) S voltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -20A DS D R ... See More ⇒

 9.1. Size:1301K  belling
 blm12n08-p blm12n08-d blm12n08-b.pdf pdf_icon

BLM12P03-R

Green Product BLM12N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM12N08 uses advanced trench technology to provide V = 80V,I = 70A DS D excellent R , low gate charge. It can be used in a wide R ... See More ⇒

Detailed specifications: BLM08P02-R, BLM10P03-D, BLM10P03-E, BLM10P03-Q, BLM10P03-R, BLM12N08-B, BLM12N08-D, BLM12N08-P, IRF740, BLM14N08-D, BLM14N08-P, BLM16N10-D, BLM16N10-P, BLM22N10-D, BLM22N10-P, BLM30DN06L-E, BLM4407

Keywords - BLM12P03-R MOSFET specs

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