All MOSFET. BLM12P03-R Datasheet

 

BLM12P03-R Datasheet and Replacement


   Type Designator: BLM12P03-R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 10.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 294 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: PDFN3.3X3.3
 

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BLM12P03-R Datasheet (PDF)

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BLM12P03-R

Pb Free Product BLM12P03 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM12P03 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -20A DS DR

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 blm12n08-p blm12n08-d blm12n08-b.pdf pdf_icon

BLM12P03-R

Green Product BLM12N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM12N08 uses advanced trench technology to provide V = 80V,I = 70A DS Dexcellent R , low gate charge. It can be used in a wide R

Datasheet: BLM08P02-R , BLM10P03-D , BLM10P03-E , BLM10P03-Q , BLM10P03-R , BLM12N08-B , BLM12N08-D , BLM12N08-P , IRF740 , BLM14N08-D , BLM14N08-P , BLM16N10-D , BLM16N10-P , BLM22N10-D , BLM22N10-P , BLM30DN06L-E , BLM4407 .

Keywords - BLM12P03-R MOSFET datasheet

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