All MOSFET. BLM14N08-D Datasheet

 

BLM14N08-D Datasheet and Replacement


   Type Designator: BLM14N08-D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-252
 
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BLM14N08-D Datasheet (PDF)

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BLM14N08-D

Green Product BLM14N08L 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM14N08L uses advanced trench technology to provide V = 80V,I = 60A DS Dexcellent R , low gate charge. It can be used in a wide R

Datasheet: BLM10P03-D , BLM10P03-E , BLM10P03-Q , BLM10P03-R , BLM12N08-B , BLM12N08-D , BLM12N08-P , BLM12P03-R , IRF840 , BLM14N08-P , BLM16N10-D , BLM16N10-P , BLM22N10-D , BLM22N10-P , BLM30DN06L-E , BLM4407 , BLM80P10-D .

History: HAT2099H | CSD13202Q2 | FDS4080N7

Keywords - BLM14N08-D MOSFET datasheet

 BLM14N08-D cross reference
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