All MOSFET. BLM14N08-D Datasheet

 

BLM14N08-D MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM14N08-D
   Marking Code: M14N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-252

 BLM14N08-D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM14N08-D Datasheet (PDF)

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 blm14n08-p blm14n08-d.pdf

BLM14N08-D BLM14N08-D

Green Product BLM14N08L 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM14N08L uses advanced trench technology to provide V = 80V,I = 60A DS Dexcellent R , low gate charge. It can be used in a wide R

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