BLM14N08-P Specs and Replacement

Type Designator: BLM14N08-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 143 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 235 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO-220

BLM14N08-P substitution

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BLM14N08-P datasheet

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 blm14n08-p blm14n08-d.pdf pdf_icon

BLM14N08-P

Green Product BLM14N08L 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM14N08L uses advanced trench technology to provide V = 80V,I = 60A DS D excellent R , low gate charge. It can be used in a wide R ... See More ⇒

Detailed specifications: BLM10P03-E, BLM10P03-Q, BLM10P03-R, BLM12N08-B, BLM12N08-D, BLM12N08-P, BLM12P03-R, BLM14N08-D, 20N60, BLM16N10-D, BLM16N10-P, BLM22N10-D, BLM22N10-P, BLM30DN06L-E, BLM4407, BLM80P10-D, BLM80P10-P

Keywords - BLM14N08-P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.