All MOSFET. BLM14N08-P Datasheet

 

BLM14N08-P Datasheet and Replacement


   Type Designator: BLM14N08-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-220
 

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BLM14N08-P Datasheet (PDF)

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BLM14N08-P

Green Product BLM14N08L 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM14N08L uses advanced trench technology to provide V = 80V,I = 60A DS Dexcellent R , low gate charge. It can be used in a wide R

Datasheet: BLM10P03-E , BLM10P03-Q , BLM10P03-R , BLM12N08-B , BLM12N08-D , BLM12N08-P , BLM12P03-R , BLM14N08-D , 20N60 , BLM16N10-D , BLM16N10-P , BLM22N10-D , BLM22N10-P , BLM30DN06L-E , BLM4407 , BLM80P10-D , BLM80P10-P .

History: SWI4N65DC | RU6H1L

Keywords - BLM14N08-P MOSFET datasheet

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