BLM16N10-P Specs and Replacement

Type Designator: BLM16N10-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm

Package: TO-220

BLM16N10-P substitution

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BLM16N10-P datasheet

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 blm16n10-p blm16n10-d.pdf pdf_icon

BLM16N10-P

Green Product BLM16N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM16N10 uses advanced trench technology to provide V = 100V,I = 60A DS D excellent R , low gate charge. It can be used in a wide R ... See More ⇒

Detailed specifications: BLM10P03-R, BLM12N08-B, BLM12N08-D, BLM12N08-P, BLM12P03-R, BLM14N08-D, BLM14N08-P, BLM16N10-D, IRF540, BLM22N10-D, BLM22N10-P, BLM30DN06L-E, BLM4407, BLM80P10-D, BLM80P10-P, BLM8205B, BLM8205E-G

Keywords - BLM16N10-P MOSFET specs

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