All MOSFET. BLM16N10-P Datasheet

 

 

BLM16N10-P Datasheet and Replacement


   Type Designator: BLM16N10-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO-220
 

 BLM16N10-P substitution

   - MOSFET ⓘ Cross-Reference Search

 

 

BLM16N10-P Datasheet (PDF)

 ..1. Size:1307K  belling
 blm16n10-p blm16n10-d.pdf pdf_icon

BLM16N10-P

Green Product BLM16N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM16N10 uses advanced trench technology to provide V = 100V,I = 60A DS Dexcellent R , low gate charge. It can be used in a wide R

Datasheet: BLM10P03-R , BLM12N08-B , BLM12N08-D , BLM12N08-P , BLM12P03-R , BLM14N08-D , BLM14N08-P , BLM16N10-D , IRF540 , BLM22N10-D , BLM22N10-P , BLM30DN06L-E , BLM4407 , BLM80P10-D , BLM80P10-P , BLM8205B , BLM8205E-G .

History: BLM30DN06L-E | CS10N80FA9D | BLM08P02-R | 2SK1898

Keywords - BLM16N10-P MOSFET datasheet

 BLM16N10-P cross reference
 BLM16N10-P equivalent finder
 BLM16N10-P lookup
 BLM16N10-P substitution
 BLM16N10-P replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.