All MOSFET. BLM4407 Datasheet

 

BLM4407 Datasheet and Replacement


   Type Designator: BLM4407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 294 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: SOP-8
 

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BLM4407 Datasheet (PDF)

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BLM4407

Pb Free Product BLM4407 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM4407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -12A DS DR

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BLM4407

Pb Free Product BLM4435 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM4435 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -10A DS DR

Datasheet: BLM12P03-R , BLM14N08-D , BLM14N08-P , BLM16N10-D , BLM16N10-P , BLM22N10-D , BLM22N10-P , BLM30DN06L-E , IRFP460 , BLM80P10-D , BLM80P10-P , BLM8205B , BLM8205E-G , BLM8205E-J , BLP012N08-T , BLP021N10-T , BLP022N10-BA .

History: FQI2N30TU | LP3218DT1G

Keywords - BLM4407 MOSFET datasheet

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