BLM8205B MOSFET Datasheet: N-Ch, 20V, 6.5A. Full specification with pinout and replacement list

BLM8205B Specs and Replacement

Type Designator: BLM8205B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: SOT23-6

BLM8205B substitution

- MOSFET ⓘ Cross-Reference Search

BLM8205B datasheet

..1. Size:501K belling
blm8205b.pdf pdf_icon

... See More ⇒

7.1. Size:629K belling
blm8205a.pdf pdf_icon

Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET D1 D2 Description The BLM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.... See More ⇒

7.2. Size:870K belling
blm8205e-j blm8205e-g.pdf pdf_icon

BLM8205E Power MOSFET 1. Description Advantages The BLM8205E uses advanced trench technology to provide excellent R ,low gate DS(ON) charge and operation with gate voltages as low as 0.7V.This device is suitable for use as a Battery protection or other switching application. Key Characteristics Parameter Value Unit SOT23-6 Schematic diagram V 19.5 V DS I 6 A D R 18 m ... See More ⇒

7.3. Size:332K belling
blm8205.pdf pdf_icon