BLM8205E-G MOSFET Datasheet: N-Ch, 19.5V, 6A. Full specification with pinout and replacement list

BLM8205E-G Specs and Replacement

Type Designator: BLM8205E-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 19.5 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0235 Ohm

Package: SOT23-6

BLM8205E-G substitution

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BLM8205E-G datasheet

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BLM8205E Power MOSFET 1. Description Advantages The BLM8205E uses advanced trench technology to provide excellent R ,low gate DS(ON) charge and operation with gate voltages as low as 0.7V.This device is suitable for use as a Battery protection or other switching application. Key Characteristics Parameter Value Unit SOT23-6 Schematic diagram V 19.5 V DS I 6 A D R 18 m ... See More ⇒

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Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET D1 D2 Description The BLM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.... See More ⇒

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