All MOSFET. BLM8205E-G Datasheet

 

BLM8205E-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM8205E-G
   Marking Code: 8205E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 19.5 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0235 Ohm
   Package: SOT23-6

 BLM8205E-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM8205E-G Datasheet (PDF)

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 blm8205e-j blm8205e-g.pdf

BLM8205E-G BLM8205E-G

BLM8205EPower MOSFET1. DescriptionAdvantagesThe BLM8205E uses advanced trenchtechnology to provide excellent R ,low gateDS(ON)charge and operation with gate voltages as lowas 0.7V.This device is suitable for use as aBattery protection or other switching application.Key CharacteristicsParameter Value UnitSOT23-6Schematic diagramV 19.5 VDSI 6 ADR 18 m

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 blm8205a.pdf

BLM8205E-G BLM8205E-G

Pb Free ProductBLM8205A N-Channel Enhancement Mode Power MOSFET D1D2Description The BLM8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram General Features VDS = 19.

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 blm8205b.pdf

BLM8205E-G BLM8205E-G

Pb Free Product BLM8205B N-Channel Enhancement Mode Power MOSFET D1 D2 Description provide The BLM8205B uses advanced trench technology to G1 G2 excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as a S1 S2 Battery protection or in other Switching application. Schematic diagram General Features

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 blm8205.pdf

BLM8205E-G BLM8205E-G

Pb Free Product BLM8205 N-Channel Enhancement Mode Power MOSFET D 1 D 2 Description The BLM8205 uses advanced trench technology to provide G 1 G 2 excellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S 1 S 2 Schematic diagram General Features

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CPH3456

 

 
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