BLP02N06L-Q Specs and Replacement

Type Designator: BLP02N06L-Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 1542 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: PDFN5X6

BLP02N06L-Q substitution

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BLP02N06L-Q datasheet

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 blp02n06l-q.pdf pdf_icon

BLP02N06L-Q

BLP02N06L MOSFET Step-Down Converter , 1 Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒

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 blp02n06l-d.pdf pdf_icon

BLP02N06L-Q

BLP02N06L MOSFET Step-Down Converter , 1 Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒

 6.1. Size:727K  belling
 blp02n06-t.pdf pdf_icon

BLP02N06L-Q

BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter... See More ⇒

 6.2. Size:1112K  belling
 blp02n06-d.pdf pdf_icon

BLP02N06L-Q

BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter... See More ⇒

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Detailed specifications: BLP024N10-BA, BLP024N10-T, BLP025N10-B, BLP025N10-P, BLP028N10-B, BLP028N10-P, BLP02N06-D, BLP02N06L-D, STP75NF75, BLP02N06-P, BLP02N06-Q, BLP02N06-T, BLP02N08-B, BLP02N08-BA, BLP02N08-F, BLP02N08-P, BLP02N08-T

Keywords - BLP02N06L-Q MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.