Справочник MOSFET. BLP02N06L-Q

 

BLP02N06L-Q Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLP02N06L-Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 156.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 84 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 1542 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: PDFN5X6
     - подбор MOSFET транзистора по параметрам

 

BLP02N06L-Q Datasheet (PDF)

 ..1. Size:694K  belling
 blp02n06l-q.pdf pdf_icon

BLP02N06L-Q

BLP02N06L MOSFET Step-Down Converter , 1Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

 4.1. Size:1115K  belling
 blp02n06l-d.pdf pdf_icon

BLP02N06L-Q

BLP02N06L MOSFET Step-Down Converter , 1Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

 6.1. Size:727K  belling
 blp02n06-t.pdf pdf_icon

BLP02N06L-Q

BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

 6.2. Size:1112K  belling
 blp02n06-d.pdf pdf_icon

BLP02N06L-Q

BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

ПОКАЗАТЬ ЕЩЁ

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