BLP02N08-P Specs and Replacement

Type Designator: BLP02N08-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 416.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 122 nS

Cossⓘ - Output Capacitance: 2350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO-220

BLP02N08-P substitution

- MOSFET ⓘ Cross-Reference Search

 

BLP02N08-P datasheet

 ..1. Size:975K  belling
 blp02n08-b blp02n08-p.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

 5.1. Size:752K  belling
 blp02n08-t.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V ... See More ⇒

 5.2. Size:953K  belling
 blp02n08-f.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

 5.3. Size:985K  belling
 blp02n08-ba.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

SHOW MORE

Detailed specifications: BLP02N06L-D, BLP02N06L-Q, BLP02N06-P, BLP02N06-Q, BLP02N06-T, BLP02N08-B, BLP02N08-BA, BLP02N08-F, IRFP260, BLP02N08-T, BLP032N06-Q, BLP032N08-T, BLP036N08-B, BLP036N08-D, BLP036N08-P, BLP038N10GL-B, BLP038N10GL-D

Keywords - BLP02N08-P MOSFET specs

 BLP02N08-P cross reference

 BLP02N08-P equivalent finder

 BLP02N08-P pdf lookup

 BLP02N08-P substitution

 BLP02N08-P replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility