BLP02N08-P. Аналоги и основные параметры

Наименование производителя: BLP02N08-P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 416.6 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 122 ns

Cossⓘ - Выходная емкость: 2350 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm

Тип корпуса: TO-220

Аналог (замена) для BLP02N08-P

- подборⓘ MOSFET транзистора по параметрам

 

BLP02N08-P даташит

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 blp02n08-b blp02n08-p.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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 blp02n08-t.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.2. Size:953K  belling
 blp02n08-f.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.3. Size:985K  belling
 blp02n08-ba.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

ПОКАЗАТЬ ЕЩЁ

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