Справочник MOSFET. BLP02N08-P

 

BLP02N08-P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLP02N08-P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 416.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 122 ns
   Cossⓘ - Выходная емкость: 2350 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

BLP02N08-P Datasheet (PDF)

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 blp02n08-b blp02n08-p.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.1. Size:752K  belling
 blp02n08-t.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.2. Size:953K  belling
 blp02n08-f.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.3. Size:985K  belling
 blp02n08-ba.pdf pdf_icon

BLP02N08-P

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

ПОКАЗАТЬ ЕЩЁ

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History: SE4060 | ZXMN0545G4 | IPA600N25NM3S

 

 
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