All MOSFET. BLP03N08-BA Datasheet

 

BLP03N08-BA Datasheet and Replacement


   Type Designator: BLP03N08-BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 253 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 1549 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-263-7
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BLP03N08-BA Datasheet (PDF)

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 blp03n08-ba blp03n08-t.pdf pdf_icon

BLP03N08-BA

BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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 blp03n08-b blp03n08-p.pdf pdf_icon

BLP03N08-BA

BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.1. Size:967K  belling
 blp03n08-f.pdf pdf_icon

BLP03N08-BA

BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 8.1. Size:1099K  belling
 blp03n10-ba blp03n10-t.pdf pdf_icon

BLP03N08-BA

BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

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