BLP03N08-BA MOSFET. Datasheet pdf. Equivalent
Type Designator: BLP03N08-BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 253 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 138.3 nC
trⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 1549 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO-263-7
BLP03N08-BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLP03N08-BA Datasheet (PDF)
blp03n08-ba blp03n08-t.pdf
BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp03n08-b blp03n08-p.pdf
BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp03n08-f.pdf
BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp03n10-ba blp03n10-t.pdf
BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
blp03n10-f.pdf
BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
blp03n10-b blp03n10-p.pdf
BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MS6N95
History: MS6N95
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