BLP03N08-BA. Аналоги и основные параметры

Наименование производителя: BLP03N08-BA

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 253 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 115 ns

Cossⓘ - Выходная емкость: 1549 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm

Тип корпуса: TO-263-7

Аналог (замена) для BLP03N08-BA

- подборⓘ MOSFET транзистора по параметрам

 

BLP03N08-BA даташит

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 blp03n08-ba blp03n08-t.pdf pdf_icon

BLP03N08-BA

BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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 blp03n08-b blp03n08-p.pdf pdf_icon

BLP03N08-BA

BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.1. Size:967K  belling
 blp03n08-f.pdf pdf_icon

BLP03N08-BA

BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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 blp03n10-ba blp03n10-t.pdf pdf_icon

BLP03N08-BA

BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

ПОКАЗАТЬ ЕЩЁ

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