All MOSFET. FQP13N50 Datasheet

 

FQP13N50 Datasheet and Replacement


   Type Designator: FQP13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: TO220
 

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FQP13N50 Datasheet (PDF)

 ..1. Size:883K  fairchild semi
 fqp13n50 fqpf13n50.pdf pdf_icon

FQP13N50

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

 ..2. Size:882K  onsemi
 fqp13n50 fqpf13n50.pdf pdf_icon

FQP13N50

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

 0.1. Size:922K  fairchild semi
 fqp13n50c fqpf13n50c.pdf pdf_icon

FQP13N50

TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t

 0.2. Size:1148K  fairchild semi
 fqp13n50cf fqpf13n50cf.pdf pdf_icon

FQP13N50

May 2006TMFRFETFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially t

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History: FDN336P

Keywords - FQP13N50 MOSFET datasheet

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