FQP13N50 Datasheet and Replacement

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t

May 2006TMFRFETFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially t

November 2013FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC)technology has been especia

FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using ON Semiconductors ID = 6.5 Aproprietary, planar stripe, DMOS technology. This Low Gate Charge (Typ. 43 nC)advanced technology has been especially tail