Справочник MOSFET. FQP13N50

 

FQP13N50 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQP13N50
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 45 nC
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.43 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FQP13N50

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQP13N50 Datasheet (PDF)

 ..1. Size:883K  fairchild semi
 fqp13n50 fqpf13n50.pdf pdf_icon

FQP13N50

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

 ..2. Size:882K  onsemi
 fqp13n50 fqpf13n50.pdf pdf_icon

FQP13N50

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

 0.1. Size:922K  fairchild semi
 fqp13n50c fqpf13n50c.pdf pdf_icon

FQP13N50

TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t

 0.2. Size:1148K  fairchild semi
 fqp13n50cf fqpf13n50cf.pdf pdf_icon

FQP13N50

May 2006TMFRFETFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially t

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History: SSS7N60A

 

 
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