BLP04N08-P PDF and Equivalents Search

 

BLP04N08-P PDF Specs and Replacement


   Type Designator: BLP04N08-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 208.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 1181 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO-220
 

 BLP04N08-P substitution

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BLP04N08-P PDF Specs

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BLP04N08-P

BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

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BLP04N08-P

BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

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BLP04N08-P

BLP04N10 MOSFET Step-Down Converter , 1 Description BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒

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BLP04N08-P

BLP045N10 MOSFET 1 Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit... See More ⇒

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Detailed specifications: BLP042N10G-B , BLP042N10G-P , BLP042N15J-B , BLP042N15J-P , BLP045N10-B , BLP045N10-P , BLP04N08-B , BLP04N08-BA , IRF2807 , BLP04N10-B , BLP04N10-P , BLP055N09G-B , BLP055N09G-P , BLP055N10-B , BLP055N10-P , BLP05N08G-B , BLP05N08G-P .

Keywords - BLP04N08-P MOSFET specs

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