BLP04N08-P Specs and Replacement
Type Designator: BLP04N08-P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 1181 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO-220
BLP04N08-P substitution
- MOSFET ⓘ Cross-Reference Search
BLP04N08-P datasheet
blp04n08-b blp04n08-p.pdf
BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
blp04n08-ba.pdf
BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
blp04n10-b blp04n10-p.pdf
BLP04N10 MOSFET Step-Down Converter , 1 Description BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒
blp045n10-b blp045n10-p.pdf
BLP045N10 MOSFET 1 Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit... See More ⇒
Detailed specifications: BLP042N10G-B , BLP042N10G-P , BLP042N15J-B , BLP042N15J-P , BLP045N10-B , BLP045N10-P , BLP04N08-B , BLP04N08-BA , IRF2807 , BLP04N10-B , BLP04N10-P , BLP055N09G-B , BLP055N09G-P , BLP055N10-B , BLP055N10-P , BLP05N08G-B , BLP05N08G-P .
Keywords - BLP04N08-P MOSFET specs
BLP04N08-P cross reference
BLP04N08-P equivalent finder
BLP04N08-P pdf lookup
BLP04N08-P substitution
BLP04N08-P replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
🌐 : EN ES РУ
LIST
Last Update
MOSFET: HAF1008S | HAF1008L | EMZB08P03H | CS30N20FA9R | AOT66613L | AOSP21313C | AOSP21311C | AOB66918L | AO3415C | AOTF20N40L
Popular searches
tip3055 transistor | irf530 datasheet | 2sc2625 | 2sc1815 transistor | 2sd718 | 2n3053 transistor | 2sc458 replacement | bc557 transistor