BLP04N08-P. Аналоги и основные параметры

Наименование производителя: BLP04N08-P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 208.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 68 ns

Cossⓘ - Выходная емкость: 1181 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm

Тип корпуса: TO-220

Аналог (замена) для BLP04N08-P

- подборⓘ MOSFET транзистора по параметрам

 

BLP04N08-P даташит

 ..1. Size:972K  belling
 blp04n08-b blp04n08-p.pdf pdf_icon

BLP04N08-P

BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.1. Size:1013K  belling
 blp04n08-ba.pdf pdf_icon

BLP04N08-P

BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 8.1. Size:1017K  belling
 blp04n10-b blp04n10-p.pdf pdf_icon

BLP04N08-P

BLP04N10 MOSFET Step-Down Converter , 1 Description BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

 9.1. Size:956K  belling
 blp045n10-b blp045n10-p.pdf pdf_icon

BLP04N08-P

BLP045N10 MOSFET 1 Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BLP042N10G-B, BLP042N10G-P, BLP042N15J-B, BLP042N15J-P, BLP045N10-B, BLP045N10-P, BLP04N08-B, BLP04N08-BA, IRF2807, BLP04N10-B, BLP04N10-P, BLP055N09G-B, BLP055N09G-P, BLP055N10-B, BLP055N10-P, BLP05N08G-B, BLP05N08G-P