BLP05N15-P Datasheet and Replacement
Type Designator: BLP05N15-P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 277.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 173 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 108 nS
Cossⓘ - Output Capacitance: 758 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-220
- MOSFET Cross-Reference Search
BLP05N15-P Datasheet (PDF)
blp05n15-b blp05n15-p.pdf

BLP05N15 MOSFET Step-Down Converter 1Description , BLP05N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150
blp05n08g-b blp05n08g-p.pdf

BLP05N08G Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp05n08g-q.pdf

BLP05N08G MOSFET Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Paramete
blp055n10-p blp055n10-b.pdf

BLP055N10 MOSFET Step-Down Converter , 1Description BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: WMJ27N80D1 | 2SK4096LS | UT8205A | IPP80N06S2L-06 | QM2417C1 | NCE30H11G | WML11N80M3
Keywords - BLP05N15-P MOSFET datasheet
BLP05N15-P cross reference
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History: WMJ27N80D1 | 2SK4096LS | UT8205A | IPP80N06S2L-06 | QM2417C1 | NCE30H11G | WML11N80M3



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