BLP05N15-P PDF and Equivalents Search

 

BLP05N15-P Specs and Replacement

Type Designator: BLP05N15-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 277.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 173 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 108 nS

Cossⓘ - Output Capacitance: 758 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-220

BLP05N15-P substitution

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BLP05N15-P datasheet

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 blp05n15-b blp05n15-p.pdf pdf_icon

BLP05N15-P

BLP05N15 MOSFET Step-Down Converter 1 Description , BLP05N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150 ... See More ⇒

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BLP05N15-P

BLP05N08G Step-Down Converter , 1 Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

 8.2. Size:1416K  belling
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BLP05N15-P

BLP05N08G MOSFET Step-Down Converter , 1 Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Paramete... See More ⇒

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 blp055n10-p blp055n10-b.pdf pdf_icon

BLP05N15-P

BLP055N10 MOSFET Step-Down Converter , 1 Description BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒

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Detailed specifications: BLP055N09G-B , BLP055N09G-P , BLP055N10-B , BLP055N10-P , BLP05N08G-B , BLP05N08G-P , BLP05N08G-Q , BLP05N15-B , 7N60 , BLP065N08G-B , BLP065N08G-D , BLP065N08GL-Q , BLP065N08G-P , BLP065N08G-U , BLP065N10GL-B , BLP065N10GL-D , BLP065N10GL-P .

Keywords - BLP05N15-P MOSFET specs

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