BLP05N15-P. Аналоги и основные параметры

Наименование производителя: BLP05N15-P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 277.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 173 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 108 ns

Cossⓘ - Выходная емкость: 758 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm

Тип корпуса: TO-220

Аналог (замена) для BLP05N15-P

- подборⓘ MOSFET транзистора по параметрам

 

BLP05N15-P даташит

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BLP05N15-P

BLP05N15 MOSFET Step-Down Converter 1 Description , BLP05N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150

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BLP05N15-P

BLP05N08G Step-Down Converter , 1 Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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BLP05N15-P

BLP05N08G MOSFET Step-Down Converter , 1 Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Paramete

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BLP05N15-P

BLP055N10 MOSFET Step-Down Converter , 1 Description BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

ПОКАЗАТЬ ЕЩЁ

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