BLP065N08GL-Q Specs and Replacement

Type Designator: BLP065N08GL-Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 515 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: PDFN5X6

BLP065N08GL-Q substitution

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BLP065N08GL-Q datasheet

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BLP065N08GL-Q

BLP065N08GL MOSFET Step-Down Converter , 1 Description BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS P... See More ⇒

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BLP065N08GL-Q

BLP065N08G Step-Down Converter , 1 Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85... See More ⇒

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BLP065N08GL-Q

BLP065N08G Step-Down Converter , 1 Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85... See More ⇒

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 blp065n10gl-p blp065n10gl-b.pdf pdf_icon

BLP065N08GL-Q

BLP065N10GL MOSFET Step-Down Converter , 1 Description BLP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par... See More ⇒

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Detailed specifications: BLP055N10-P, BLP05N08G-B, BLP05N08G-P, BLP05N08G-Q, BLP05N15-B, BLP05N15-P, BLP065N08G-B, BLP065N08G-D, IRF830, BLP065N08G-P, BLP065N08G-U, BLP065N10GL-B, BLP065N10GL-D, BLP065N10GL-P, BLP065N10GL-Q, BLP06N08G-B, BLP06N08G-P

Keywords - BLP065N08GL-Q MOSFET specs

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 BLP065N08GL-Q replacement

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