BLP065N08GL-Q - аналоги и даташиты транзистора

 

BLP065N08GL-Q - Даташиты. Аналоги. Основные параметры


   Наименование производителя: BLP065N08GL-Q
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 515 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: PDFN5X6
 

 Аналог (замена) для BLP065N08GL-Q

   - подбор ⓘ MOSFET транзистора по параметрам

 

BLP065N08GL-Q Datasheet (PDF)

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 blp065n08gl-q.pdf pdf_icon

BLP065N08GL-Q

BLP065N08GL MOSFET Step-Down Converter , 1Description BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS P

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 blp065n08g-d blp065n08g-u.pdf pdf_icon

BLP065N08GL-Q

BLP065N08G Step-Down Converter , 1Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

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 blp065n08g-b blp065n08g-p.pdf pdf_icon

BLP065N08GL-Q

BLP065N08G Step-Down Converter , 1Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

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 blp065n10gl-p blp065n10gl-b.pdf pdf_icon

BLP065N08GL-Q

BLP065N10GL MOSFET Step-Down Converter , 1Description BLP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BLP055N10-P , BLP05N08G-B , BLP05N08G-P , BLP05N08G-Q , BLP05N15-B , BLP05N15-P , BLP065N08G-B , BLP065N08G-D , IRF1405 , BLP065N08G-P , BLP065N08G-U , BLP065N10GL-B , BLP065N10GL-D , BLP065N10GL-P , BLP065N10GL-Q , BLP06N08G-B , BLP06N08G-P .

History: IXFX64N50Q3 | SSF2305 | TSM1N45DCS | STI12NM50N | PMDPB56XN | APT5010JLL | IXFP80N25X3

 

 
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