BLP065N08GL-Q. Аналоги и основные параметры

Наименование производителя: BLP065N08GL-Q

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 35 ns

Cossⓘ - Выходная емкость: 515 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm

Тип корпуса: PDFN5X6

Аналог (замена) для BLP065N08GL-Q

- подборⓘ MOSFET транзистора по параметрам

 

BLP065N08GL-Q даташит

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BLP065N08GL-Q

BLP065N08GL MOSFET Step-Down Converter , 1 Description BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS P

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 blp065n08g-d blp065n08g-u.pdf pdf_icon

BLP065N08GL-Q

BLP065N08G Step-Down Converter , 1 Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

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BLP065N08GL-Q

BLP065N08G Step-Down Converter , 1 Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

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 blp065n10gl-p blp065n10gl-b.pdf pdf_icon

BLP065N08GL-Q

BLP065N10GL MOSFET Step-Down Converter , 1 Description BLP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

ПОКАЗАТЬ ЕЩЁ

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