FQP16N25 PDF and Equivalents Search

 

FQP16N25 Specs and Replacement

Type Designator: FQP16N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO220

FQP16N25 substitution

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FQP16N25 datasheet

 ..1. Size:736K  fairchild semi
 fqp16n25.pdf pdf_icon

FQP16N25

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been esp... See More ⇒

 0.1. Size:1162K  fairchild semi
 fqp16n25c fqpf16n25c.pdf pdf_icon

FQP16N25

QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailore... See More ⇒

 0.2. Size:260K  inchange semiconductor
 fqp16n25c.pdf pdf_icon

FQP16N25

isc N-Channel MOSFET Transistor FQP16N25C FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒

 8.1. Size:721K  fairchild semi
 fqp16n15.pdf pdf_icon

FQP16N25

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been... See More ⇒

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Detailed specifications: FQP12P20, FQP13N06L, FQP13N10, FDD3682, FQP13N10L, FDB16AN08A0, FQP13N50, FQP14N30, 4435, FQP17N40, FDD6688, FQP17P06, FQP17P10, FQP19N20, FQPF13N50C, FQP19N20C, FQPF12N60C

Keywords - FQP16N25 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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