All MOSFET. FQP16N25 Datasheet

 

FQP16N25 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP16N25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm

Package: TO220

FQP16N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP16N25 Datasheet (PDF)

1.1. fqp16n25.pdf Size:736K _fairchild_semi

FQP16N25
FQP16N25

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 16A, 250V, RDS(on) = 0.23? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailo

1.2. fqp16n25c fqpf16n25c.pdf Size:1162K _fairchild_semi

FQP16N25
FQP16N25

® QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.6A, 250V, RDS(on) = 0.27? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar stripe, DMOS technology. • Low Crss ( typical 68 pF) This advanced technology has been especially tailored to • Fast s

Datasheet: FQP12P20 , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , FQP14N30 , IRFP4332 , FQP17N40 , FDD6688 , FQP17P06 , FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C , FQPF12N60C .

 


FQP16N25
  FQP16N25
  FQP16N25
 

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