All MOSFET. FQP16N25 Datasheet

 

FQP16N25 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQP16N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TO220

 FQP16N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP16N25 Datasheet (PDF)

 ..1. Size:736K  fairchild semi
 fqp16n25.pdf

FQP16N25 FQP16N25

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been esp

 0.1. Size:1162K  fairchild semi
 fqp16n25c fqpf16n25c.pdf

FQP16N25 FQP16N25

QFETFQP16N25C/FQPF16N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 68 pF)This advanced technology has been especially tailore

 0.2. Size:260K  inchange semiconductor
 fqp16n25c.pdf

FQP16N25 FQP16N25

isc N-Channel MOSFET Transistor FQP16N25CFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 8.1. Size:721K  fairchild semi
 fqp16n15.pdf

FQP16N25 FQP16N25

April 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 23 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top