FQP16N25 - аналоги, параметры транзистора - Справочник транзисторов

FQP16N25 даташит

..1. Size:736K fairchild semi
fqp16n25.pdf pdf_icon

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been esp

0.1. Size:1162K fairchild semi
fqp16n25c fqpf16n25c.pdf pdf_icon

QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailore

0.2. Size:260K inchange semiconductor
fqp16n25c.pdf pdf_icon

isc N-Channel MOSFET Transistor FQP16N25C FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

8.1. Size:721K fairchild semi
fqp16n15.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been

Другие MOSFET... FQP12P20 , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , FQP14N30 , 4435 , FQP17N40 , FDD6688 , FQP17P06 , FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C , FQPF12N60C .