All MOSFET. BLP075N10G-P Datasheet

 

BLP075N10G-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLP075N10G-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 841 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-220

 BLP075N10G-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLP075N10G-P Datasheet (PDF)

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 blp075n10g-p blp075n10g-b.pdf

BLP075N10G-P BLP075N10G-P

BLP075N10G MOSFET Step-Down Converter , 1Description BLP075N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Param

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