BLP075N10G-P Specs and Replacement

Type Designator: BLP075N10G-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 841 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO-220

BLP075N10G-P substitution

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BLP075N10G-P datasheet

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BLP075N10G-P

BLP075N10G MOSFET Step-Down Converter , 1 Description BLP075N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Param... See More ⇒

Detailed specifications: BLP065N08G-U, BLP065N10GL-B, BLP065N10GL-D, BLP065N10GL-P, BLP065N10GL-Q, BLP06N08G-B, BLP06N08G-P, BLP075N10G-B, AO4407A, BLP08N10G-B, BLP08N10G-D, BLP08N10G-P, BLP08N10G-Q, BLP10N20J-B, BLP10N20J-P, BLP12N10G-B, BLP12N10G-D

Keywords - BLP075N10G-P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.