All MOSFET. BLP12N10GL-D Datasheet

 

BLP12N10GL-D Datasheet and Replacement


   Type Designator: BLP12N10GL-D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 274 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-252
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BLP12N10GL-D Datasheet (PDF)

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 blp12n10gl-d.pdf pdf_icon

BLP12N10GL-D

BLP12N10GL MOSFET Step-Down Converter , 1Description BLP12N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS

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 blp12n10gl-q.pdf pdf_icon

BLP12N10GL-D

BLP12N10GL Step-Down Converter , 1Description BLP12N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 35 A

 5.1. Size:953K  belling
 blp12n10g-e.pdf pdf_icon

BLP12N10GL-D

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 11 A D

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 blp12n10g-b blp12n10g-p.pdf pdf_icon

BLP12N10GL-D

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 55 A D

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SPD04N60S5 | FCPF7N60YDTU | AP6679GI-HF | H7N1002LM | DM12N65C | ZVN0124ASTOA

Keywords - BLP12N10GL-D MOSFET datasheet

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