Справочник MOSFET. BLP12N10GL-D

 

BLP12N10GL-D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLP12N10GL-D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 55.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 56 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 274 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

BLP12N10GL-D Datasheet (PDF)

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 blp12n10gl-d.pdf pdf_icon

BLP12N10GL-D

BLP12N10GL MOSFET Step-Down Converter , 1Description BLP12N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS

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 blp12n10gl-q.pdf pdf_icon

BLP12N10GL-D

BLP12N10GL Step-Down Converter , 1Description BLP12N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 35 A

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 blp12n10g-e.pdf pdf_icon

BLP12N10GL-D

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 11 A D

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 blp12n10g-b blp12n10g-p.pdf pdf_icon

BLP12N10GL-D

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 55 A D

ПОКАЗАТЬ ЕЩЁ

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History: NCE0240 | IRF6729MPBF | SRC60R045FB | IRFH5004PBF | LSD60R1K4HT | AP70SL500AH | BLS70R420-P

 

 
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