All MOSFET. BLP14N08L-Q Datasheet

 

BLP14N08L-Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLP14N08L-Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.4 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: PDFN5X6

 BLP14N08L-Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLP14N08L-Q Datasheet (PDF)

 ..1. Size:1423K  belling
 blp14n08l-q.pdf

BLP14N08L-Q BLP14N08L-Q

BLP14N08L MOSFET , 1Description BLP14N08L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 80 V DSSI 35 A DR 13.8 m DS(on)

 4.1. Size:943K  belling
 blp14n08l-d.pdf

BLP14N08L-Q BLP14N08L-Q

BLP14N08L MOSFET , 1Description BLP14N08L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 80 V DSSI 37 A DR 12.5 m DS(on)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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