BLP14N08L-Q Datasheet. Specs and Replacement
Type Designator: BLP14N08L-Q 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 245 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
Package: PDFN5X6
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BLP14N08L-Q substitution
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BLP14N08L-Q datasheet
blp14n08l-q.pdf
BLP14N08L MOSFET , 1 Description BLP14N08L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 80 V DSS I 35 A D R 13.8 m DS(on)... See More ⇒
blp14n08l-d.pdf
BLP14N08L MOSFET , 1 Description BLP14N08L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 80 V DSS I 37 A D R 12.5 m DS(on)... See More ⇒
Detailed specifications: BLP12N10G-D, BLP12N10G-E, BLP12N10GL-D, BLP12N10GL-Q, BLP12N10G-P, BLP12N10G-Q, BLP12N10G-U, BLP14N08L-D, IRF640, BLP20N10L-D, BLP20N10L-Q, BLQM15N06L-D, BLS60R036-F, BLS60R036-W, BLS60R150-A, BLS60R150-F, BLS60R150F-A
Keywords - BLP14N08L-Q MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
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